Аннотация
Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.
Язык оригинала | английский |
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Страницы (с-по) | 795-799 |
Число страниц | 5 |
Журнал | Semiconductors |
Том | 53 |
Номер выпуска | 6 |
DOI | |
Состояние | Опубликовано - 1 июн 2019 |