Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov; E. E. Rodyakina; A. V. Latyshev

doi:10.1134/S106378261906023X

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

Язык оригинала	английский
Страницы (с-по)	795-799
Число страниц	5
Журнал	Semiconductors
Том	53
Номер выпуска	6
DOI	https://doi.org/10.1134/S106378261906023X
Состояние	Опубликовано - 1 июн 2019

Доступ к документу

10.1134/S106378261906023X

Link to publication in Scopus

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Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation. / Sitnikov, S. V.; Rodyakina, E. E.; Latyshev, A. V.

В: Semiconductors, Том 53, № 6, 01.06.2019, стр. 795-799.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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