Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

Язык оригиналаанглийский
Страницы (с-по)795-799
Число страниц5
ЖурналSemiconductors
Том53
Номер выпуска6
DOI
СостояниеОпубликовано - 1 июн 2019

Fingerprint Подробные сведения о темах исследования «Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать