Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov; E. E. Rodyakina; A. V. Latyshev

doi:10.1134/S106378261906023X

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

S. V. Sitnikov, E. E. Rodyakina, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

Язык оригинала	английский
Страницы (с-по)	795-799
Число страниц	5
Журнал	Semiconductors
Том	53
Номер выпуска	6
DOI	https://doi.org/10.1134/S106378261906023X
Состояние	Опубликовано - 1 июн 2019

Доступ к документу

10.1134/S106378261906023X

Другие файлы и ссылки

Link to publication in Scopus

Fingerprint

Подробные сведения о темах исследования «Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{157381259ac8495c9937f179fb8cd65c,

title = "Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation",

abstract = "Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.",

keywords = "ATOMIC STEPS, SI(001), DIFFUSION, SI",

author = "Sitnikov, {S. V.} and Rodyakina, {E. E.} and Latyshev, {A. V.}",

year = "2019",

month = jun,

day = "1",

doi = "10.1134/S106378261906023X",

language = "English",

volume = "53",

pages = "795--799",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "6",

}

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation. / Sitnikov, S. V.; Rodyakina, E. E.; Latyshev, A. V.

В: Semiconductors, Том 53, № 6, 01.06.2019, стр. 795-799.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation

AU - Sitnikov, S. V.

AU - Rodyakina, E. E.

AU - Latyshev, A. V.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

AB - Abstract: By means of in situ ultrahigh vacuum reflection electron microscopy, the nucleation of vacancy islands on wide terraces of the Si(100) surface is investigated. The temperature dependence of the displacement of a vacancy island nucleation center is determined in the process of heating a sample with a dc electric current. On the basis of a theoretical model, the effective electric charge of addimers is estimated in the direction across dimer rows of the surface. The effective charge has a positive sign and does not exceed 15 units of the elementary charge in the temperature range of 1020–1120°C.

KW - ATOMIC STEPS

KW - SI(001)

KW - DIFFUSION

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85067187521&partnerID=8YFLogxK

U2 - 10.1134/S106378261906023X

DO - 10.1134/S106378261906023X

M3 - Article

AN - SCOPUS:85067187521

VL - 53

SP - 795

EP - 799

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -