Electrically controlled spin polarization in suspended GaAs quantum point contacts

D. A. Pokhabov, A. G. Pogosov, E. Yu Zhdanov, A. A. Shevyrin, A. K. Bakarov, A. A. Shklyaev

Результат исследования: Научные публикации в периодических изданияхстатья по материалам конференциирецензирование

Аннотация

We report on the observation of the lateral electric spin polarization effect in a suspended GaAs-based quantum point contact (QPC) separated from the substrate. The effect manifests itself in the experiment as the appearance of an additional half-integer plateaus at 0.5 2e 2/h when the asymmetric voltage is applied to the side gates in zero magnetic field. The appearance of the plateaus has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPCs becomes possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

Язык оригиналаанглийский
Номер статьи061001
ЖурналJournal of Physics: Conference Series
Том1124
Номер выпуска6
DOI
СостояниеОпубликовано - 1 янв 2018
Событие5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018 - St. Petersburg, Российская Федерация
Продолжительность: 2 апр 20185 апр 2018

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