Аннотация
This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.
Язык оригинала | английский |
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Страницы (с-по) | 496-501 |
Число страниц | 6 |
Журнал | Optoelectronics, Instrumentation and Data Processing |
Том | 54 |
Номер выпуска | 5 |
DOI | |
Состояние | Опубликовано - 1 сен 2018 |