Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

E. Yu Zhdanov, A. G. Pogosov, D. A. Pokhabov, M. V. Budantsev, A. S. Kozhukhov, A. K. Bakarov

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

Язык оригиналаанглийский
Страницы (с-по)496-501
Число страниц6
ЖурналOptoelectronics, Instrumentation and Data Processing
Том54
Номер выпуска5
DOI
СостояниеОпубликовано - 1 сен 2018

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