Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

E. Yu Zhdanov; A. G. Pogosov; D. A. Pokhabov; M. V. Budantsev; A. S. Kozhukhov; A. K. Bakarov

doi:10.3103/S8756699018050114

Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

E. Yu Zhdanov, A. G. Pogosov, D. A. Pokhabov, M. V. Budantsev, A. S. Kozhukhov, A. K. Bakarov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

Язык оригинала	английский
Страницы (с-по)	496-501
Число страниц	6
Журнал	Optoelectronics, Instrumentation and Data Processing
Том	54
Номер выпуска	5
DOI	https://doi.org/10.3103/S8756699018050114
Состояние	Опубликовано - 1 сен 2018

Доступ к документу

10.3103/S8756699018050114

Link to publication in Scopus

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title = "Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy",

abstract = "This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.",

keywords = "atomic-force microscopy, GaAs/AlGaAs, nanoelectromechanical systems, suspended nanostructures",

author = "Zhdanov, {E. Yu} and Pogosov, {A. G.} and Pokhabov, {D. A.} and Budantsev, {M. V.} and Kozhukhov, {A. S.} and Bakarov, {A. K.}",

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Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy. / Zhdanov, E. Yu ; Pogosov, A. G.; Pokhabov, D. A.; Budantsev, M. V.; Kozhukhov, A. S.; Bakarov, A. K.

В: Optoelectronics, Instrumentation and Data Processing, Том 54, № 5, 01.09.2018, стр. 496-501.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Elastic Properties of Suspended Conducting GaAs/AlGaAs Nanostructures by Means of Atomic Force Microscopy

AU - Zhdanov, E. Yu

AU - Pogosov, A. G.

AU - Pokhabov, D. A.

AU - Budantsev, M. V.

AU - Kozhukhov, A. S.

AU - Bakarov, A. K.

PY - 2018/9/1

Y1 - 2018/9/1

N2 - This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

AB - This paper demonstrates the applicability of nanoindentation technique using atomic-force microscope cantilever for studying the elastic properties of suspended semiconductor structures on the basis of relatively thick GaAs/AlGaAs membranes in the case when their stiffness significantly exceeds that of the cantilever of atomic-force microscope, which is confirmed by the agreement between the experimentally determined values of both relative and absolute stiffness measured at different points of the investigated structure with theoretical predictions.

KW - atomic-force microscopy

KW - GaAs/AlGaAs

KW - nanoelectromechanical systems

KW - suspended nanostructures

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