Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers

T. V. Malin, D. S. Milakhin, V. G. Mansurov, Yu G. Galitsyn, A. S. Kozhuhov, V. V. Ratnikov, A. N. Smirnov, V. Yu Davydov, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

4 Цитирования (Scopus)

Аннотация

The effect of atomic aluminum deposited onto sapphire substrates with different nitridation levels on the quality of AlN layers grown by ammonia molecular-beam epitaxy is investigated. The nitridation of sapphire with the formation of ~1 monolayer of AlN is shown to ensure the growth of layers with a smoother surface and better crystal quality than in the case of the formation of a nitrided AlN layer with a thickness of ~2 monolayers. It is demonstrated that the change in the duration of exposure of nitrided substrates to the atomic aluminum flux does not significantly affect the parameters of subsequent AlN layers.

Язык оригиналаанглийский
Страницы (с-по)789-796
Число страниц8
ЖурналSemiconductors
Том52
Номер выпуска6
DOI
СостояниеОпубликовано - 1 июн 2018

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  • Цитировать

    Malin, T. V., Milakhin, D. S., Mansurov, V. G., Galitsyn, Y. G., Kozhuhov, A. S., Ratnikov, V. V., Smirnov, A. N., Davydov, V. Y., & Zhuravlev, K. S. (2018). Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers. Semiconductors, 52(6), 789-796. https://doi.org/10.1134/S1063782618060143