Effect of nitrogen impurities on the Raman line width in diamond, revisited

Nikolay V. Surovtsev, Igor N. Kupriyanov

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

14 Цитирования (Scopus)


The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed.

Язык оригиналаанглийский
Номер статьи239
Число страниц9
Номер выпуска8
СостояниеОпубликовано - 1 авг. 2017


Подробные сведения о темах исследования «Effect of nitrogen impurities on the Raman line width in diamond, revisited». Вместе они формируют уникальный семантический отпечаток (fingerprint).