Effect of nitrogen impurities on the Raman line width in diamond, revisited

Nikolay V. Surovtsev, Igor N. Kupriyanov

Результат исследования: Научные публикации в периодических изданияхстатья

13 Цитирования (Scopus)

Аннотация

The results of a high-resolution Raman scattering study of a diamond crystal with a high content of single substitutional nitrogen impurities (550 ppm) in the temperature range from 50 to 673 K are presented and compared with the data for defect-free diamond. It is established that the increase of the nitrogen concentration in diamond leads to the temperature-independent increase of the Raman line width. Analysis of the experimental data allows us to conclude that this broadening should be attributed to the defect-induced shortening of the Raman phonon lifetime. We believe that this mechanism is responsible for the increase of the Raman line width caused by most point-like defects in diamond. No pronounced effects of the nitrogen defects on the Raman line position and phonon anharmonicity are observed.

Язык оригиналаанглийский
Номер статьи239
Число страниц9
ЖурналCrystals
Том7
Номер выпуска8
DOI
СостояниеОпубликовано - 1 авг 2017

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