Effect of crystal structure on the Young's modulus of GaP nanowires

Prokhor A. Alekseev, Bogdan R. Borodin, Pavel Geydt, Vladislav Khayrudinov, Kristina Bespalova, Demid A. Kirilenko, Rodion R. Reznik, Alexey V. Nashchekin, Tuomas Haggrén, Erkki Lähderanta, George E. Cirlin, Harri Lipsanen, Mikhail S. Dunaevskiy

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

Young's modulus of tapered mixed composition (zinc-blende with a high density of twins and wurtzite with a high density of stacking faults) gallium phosphide (GaP) nanowires (NWs) was investigated by atomic force microscopy. Experimental measurements were performed by obtaining bending profiles of as-grown inclined GaP NWs deformed by applying a constant force to a series of NW surface locations at various distances from the NW/substrate interface. Numerical modeling of experimental data on bending profiles was done by applying Euler-Bernoulli beam theory. Measurements of the nano-local stiffness at different distances from the NW/substrate interface revealed NWs with a non-ideal mechanical fixation at the NW/substrate interface. Analysis of the NWs with ideally fixed base resulted in experimentally measured Young's modulus of 155 20 GPa for ZB NWs, and 157 20 GPa for WZ NWs, respectively, which are in consistence with a theoretically predicted bulk value of 167 GPa. Thus, impacts of the crystal structure (WZ/ZB) and crystal defects on Young's modulus of GaP NWs were found to be negligible.

Язык оригиналаанглийский
Номер статьи385706
ЖурналNanotechnology
Том32
Номер выпуска38
DOI
СостояниеОпубликовано - 17 сен 2021

Предметные области OECD FOS+WOS

  • 2.11 ПРОЧИЕ ТЕХНОЛОГИИ
  • 1.04 ХИМИЧЕСКИЕ НАУКИ
  • 2.02 ЭЛЕКТРОТЕХНИКА, ЭЛЕКТРОННАЯ ТЕХНИКА, ИНФОРМАЦИОННЫЕ ТЕХНОЛОГИИ
  • 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
  • 2.03 МЕХАНИКА И МАШИНОСТРОЕНИЕ

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