Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

Valery D. Antsygin; Alexander A. Mamrashev; Nazar A. Nikolaev; Oleg I. Potaturkin

doi:10.1109/TTHZ.2015.2443493

Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

Valery D. Antsygin, Alexander A. Mamrashev, Nazar A. Nikolaev, Oleg I. Potaturkin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

3 Цитирования (Scopus)

Аннотация

The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

Язык оригинала	английский
Номер статьи	7137677
Страницы (с-по)	673-679
Число страниц	7
Журнал	IEEE Transactions on Terahertz Science and Technology
Том	5
Номер выпуска	4
DOI	https://doi.org/10.1109/TTHZ.2015.2443493
Состояние	Опубликовано - 1 июл 2015
Опубликовано для внешнего пользования	Да

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10.1109/TTHZ.2015.2443493

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abstract = "The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.",

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Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors. / Antsygin, Valery D.; Mamrashev, Alexander A.; Nikolaev, Nazar A.; Potaturkin, Oleg I.

В: IEEE Transactions on Terahertz Science and Technology, Том 5, № 4, 7137677, 01.07.2015, стр. 673-679.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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