Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

Valery D. Antsygin, Alexander A. Mamrashev, Nazar A. Nikolaev, Oleg I. Potaturkin

Результат исследования: Научные публикации в периодических изданияхстатья

3 Цитирования (Scopus)

Аннотация

The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

Язык оригиналаанглийский
Номер статьи7137677
Страницы (с-по)673-679
Число страниц7
ЖурналIEEE Transactions on Terahertz Science and Technology
Том5
Номер выпуска4
DOI
СостояниеОпубликовано - 1 июл 2015
Опубликовано для внешнего пользованияДа

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