Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

Valery D. Antsygin; Alexander A. Mamrashev; Nazar A. Nikolaev; Oleg I. Potaturkin

doi:10.1109/TTHZ.2015.2443493

Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

Valery D. Antsygin, Alexander A. Mamrashev, Nazar A. Nikolaev, Oleg I. Potaturkin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

3 Цитирования (Scopus)

Аннотация

The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

Язык оригинала	английский
Номер статьи	7137677
Страницы (с-по)	673-679
Число страниц	7
Журнал	IEEE Transactions on Terahertz Science and Technology
Том	5
Номер выпуска	4
DOI	https://doi.org/10.1109/TTHZ.2015.2443493
Состояние	Опубликовано - 1 июл 2015
Опубликовано для внешнего пользования	Да

Доступ к документу

10.1109/TTHZ.2015.2443493

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{4883d421fa3c4d148e7505039671a939,

title = "Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors",

abstract = "The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.",

keywords = "InAs, InSb, magnetic field, narrow-gap semiconductor, optical rectification, photo-Dember effect, terahertz (THz) generator, THz spectroscopy",

author = "Antsygin, {Valery D.} and Mamrashev, {Alexander A.} and Nikolaev, {Nazar A.} and Potaturkin, {Oleg I.}",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/TTHZ.2015.2443493",

language = "English",

volume = "5",

pages = "673--679",

journal = "IEEE Transactions on Terahertz Science and Technology",

issn = "2156-342X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors. / Antsygin, Valery D.; Mamrashev, Alexander A.; Nikolaev, Nazar A.; Potaturkin, Oleg I.

В: IEEE Transactions on Terahertz Science and Technology, Том 5, № 4, 7137677, 01.07.2015, стр. 673-679.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Effect of a Magnetic Field on Wideband Terahertz Generation on the Surface of Semiconductors

AU - Antsygin, Valery D.

AU - Mamrashev, Alexander A.

AU - Nikolaev, Nazar A.

AU - Potaturkin, Oleg I.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

AB - The effect of a magnetic field on the enhancement of the efficiency of terahertz (THz) generation on the surface of narrow-gap semiconductors is analyzed. A novel small-size THz generator is proposed. It consists of two permanent magnets with opposite magnetization placed on a yoke forming Kittel structure. The construction provides magnetic field concentration in the active zone of a semiconductor placed closely on top of the magnets. Its capabilities of converting femtosecond pulses of the first and second harmonics of an erbium fiber laser are investigated by THz time-domain spectrometer. n-InAs and η-InSb semiconductors in the magnetic field of 0.8 T prove to be the best THz generators at 775-and 1550-nm pump wavelengths correspondingly.

KW - InAs

KW - InSb

KW - magnetic field

KW - narrow-gap semiconductor

KW - optical rectification

KW - photo-Dember effect

KW - terahertz (THz) generator

KW - THz spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85027957528&partnerID=8YFLogxK

U2 - 10.1109/TTHZ.2015.2443493

DO - 10.1109/TTHZ.2015.2443493

M3 - Article

AN - SCOPUS:85027957528

VL - 5

SP - 673

EP - 679

JO - IEEE Transactions on Terahertz Science and Technology

JF - IEEE Transactions on Terahertz Science and Technology

SN - 2156-342X

IS - 4

M1 - 7137677

ER -