Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

Evgenia Kablukova, Karl Sabelfeld, Dmitrii Y. Protasov, Konstantin S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

Аннотация

Monte Carlo algorithms are developed to simulate the electron transport in semiconductors. In particular, the drift velocity in GaN semiconductors is calculated, and a comparison with experimental measurements is discussed. Explicit expressions for the scattering probabilities and distributions of the scattering angle of electrons on polar optical and intervalley phonons, and acoustic deformation potential as well are given. A good agreement of the simulation results and the experimental measurements reveals that the M-L valley is located at 0.7 eV higher than the Γ-valley. This value agrees with other experimental studies, while it is lower compared to ab initio calculations.

Язык оригиналаанглийский
Страницы (с-по)263-271
Число страниц9
ЖурналMonte Carlo Methods and Applications
Том26
Номер выпуска4
Ранняя дата в режиме онлайн30 окт 2020
DOI
СостояниеОпубликовано - 1 дек 2020

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