Аннотация

The conductance of a suspended quantum point contact fabricated on the basis of GaAs/AlGaAs heterostructures with a two-dimensional electron gas and equipped with side gates separated from the constriction using lithographical trenches is investigated. The gate dependences of the conductance of such structures correspond to the unusual double-channel mode with independent quantization of the conductance of two channels, and the conductance of separate channels can be independently controlled using two side gates. The electrostatic-formation mechanism of a two-channel structure inside a single constriction associated with the lateral redistribution of low-mobility X-valley electrons containing superlattice heterostructure layers, which leads to the formation of a potential barrier separating the conductivity electrons into two channels symmetrically shifted towards the lithographic trenches, specifying the nanostructure geometry, is considered.

Язык оригиналаанглийский
Страницы (с-по)1605-1610
Число страниц6
ЖурналSemiconductors
Том54
Номер выпуска12
DOI
СостояниеОпубликовано - дек 2020

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