Donor-acceptor pair emission via defects with strong electron-phonon coupling in heavily doped AlxGa1-xN:Si layers with Al content x > 0.5

Igor V. Osinnykh, Timur V. Malin, Denis S. Milakhin, Viktor F. Plyusnin, Konstantin S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

We report the results of time-resolved and temperature-dependent stationary photoluminescence investigations of the defects responsible for emission in the visible spectral range in heavily silicon-doped Al x Ga1-xN layers grown by molecular beam epitaxy on sapphire substrates. The emission band was attributed to donor-acceptor transitions. The transitions were described using the one-dimensional configuration coordinate model taking into account the high-doping regime. An increase in Al content from 0.56 to 1 leads to an increase in the acceptor ionization energy from 1.4 to 1.87 eV. The value of the Franck-Condon shift is about 1 eV at x = 0.56-0.74 and decreases to 0.8 eV at x > 0.74. The changes in the donor-acceptor transition energy parameters with increasing silicon concentration are discussed.

Язык оригиналаанглийский
Номер статьи27
Число страниц7
ЖурналJapanese Journal of Applied Physics
Том58
Номер выпускаSC
DOI
СостояниеОпубликовано - 1 июн 2019

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