Аннотация
Recombination dynamics, photoluminescence and photoluminescence excitation spectra have been investigated for 1.9 eV photoluminescence band in AlN in the temperature range of 5-650 K. The recombination dynamics for the 1.9 eV photoluminescence band has been described by a model of donor-acceptor recombination with taking into account a broadening due to electron coupling with local lattice vibrations of a deep level defect. The experimental results have been compared with density functional theory calculations of luminescence peak energies and line shapes of band to defect and donor-acceptor transitions, and possible origin of the orange photoluminescence band in AlN has been discussed.
Язык оригинала | английский |
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Номер статьи | 125006 |
Число страниц | 9 |
Журнал | Semiconductor Science and Technology |
Том | 35 |
Номер выпуска | 12 |
DOI | |
Состояние | Опубликовано - окт 2020 |