Diamond crystallization from an antimony-carbon system under high pressure and temperature

Yuri N. Palyanov; Yuri M. Borzdov; Igor N. Kupriyanov; Yuliya V. Bataleva; Alexander F. Khokhryakov; Alexander G. Sokol

doi:10.1021/acs.cgd.5b00310

Diamond crystallization from an antimony-carbon system under high pressure and temperature

Yuri N. Palyanov, Yuri M. Borzdov, Igor N. Kupriyanov, Yuliya V. Bataleva, Alexander F. Khokhryakov, Alexander G. Sokol

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

13 Цитирования (Scopus)

Аннотация

We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.

Язык оригинала	английский
Страницы (с-по)	2539-2544
Число страниц	6
Журнал	Crystal Growth and Design
Том	15
Номер выпуска	5
DOI	https://doi.org/10.1021/acs.cgd.5b00310
Состояние	Опубликовано - 6 мая 2015

Доступ к документу

10.1021/acs.cgd.5b00310

Link to publication in Scopus

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abstract = "We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.",

author = "Palyanov, {Yuri N.} and Borzdov, {Yuri M.} and Kupriyanov, {Igor N.} and Bataleva, {Yuliya V.} and Khokhryakov, {Alexander F.} and Sokol, {Alexander G.}",

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Diamond crystallization from an antimony-carbon system under high pressure and temperature. / Palyanov, Yuri N.; Borzdov, Yuri M.; Kupriyanov, Igor N.; Bataleva, Yuliya V.; Khokhryakov, Alexander F.; Sokol, Alexander G.

В: Crystal Growth and Design, Том 15, № 5, 06.05.2015, стр. 2539-2544.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Diamond crystallization from an antimony-carbon system under high pressure and temperature

AU - Palyanov, Yuri N.

AU - Borzdov, Yuri M.

AU - Kupriyanov, Igor N.

AU - Bataleva, Yuliya V.

AU - Khokhryakov, Alexander F.

AU - Sokol, Alexander G.

PY - 2015/5/6

Y1 - 2015/5/6

N2 - We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.

AB - We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.

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DO - 10.1021/acs.cgd.5b00310

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