Diamond crystallization from a tin-carbon system at HPHT conditions

Yuri N. Palyanov; Yuri M. Borzdov; Igor N. Kupriyanov; Yuliya V. Bataleva; Alexander F. Khohkhryakov

doi:10.1016/j.diamond.2015.06.003

Diamond crystallization from a tin-carbon system at HPHT conditions

Yuri N. Palyanov, Yuri M. Borzdov, Igor N. Kupriyanov, Yuliya V. Bataleva, Alexander F. Khohkhryakov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

11 Цитирования (Scopus)

Аннотация

Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.

Язык оригинала	английский
Номер статьи	6412
Страницы (с-по)	40-45
Число страниц	6
Журнал	Diamond and Related Materials
Том	58
DOI	https://doi.org/10.1016/j.diamond.2015.06.003
Состояние	Опубликовано - 14 июн 2015

Доступ к документу

10.1016/j.diamond.2015.06.003

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abstract = "Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.",

keywords = "Defect characterization, High pressure high temperature, Nitrogen impurities, Solvent-catalysts, Synthetic diamond",

author = "Palyanov, {Yuri N.} and Borzdov, {Yuri M.} and Kupriyanov, {Igor N.} and Bataleva, {Yuliya V.} and Khohkhryakov, {Alexander F.}",

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Diamond crystallization from a tin-carbon system at HPHT conditions. / Palyanov, Yuri N.; Borzdov, Yuri M.; Kupriyanov, Igor N.; Bataleva, Yuliya V.; Khohkhryakov, Alexander F.

В: Diamond and Related Materials, Том 58, 6412, 14.06.2015, стр. 40-45.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Diamond crystallization from a tin-carbon system at HPHT conditions

AU - Palyanov, Yuri N.

AU - Borzdov, Yuri M.

AU - Kupriyanov, Igor N.

AU - Bataleva, Yuliya V.

AU - Khohkhryakov, Alexander F.

PY - 2015/6/14

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N2 - Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.

AB - Diamond crystallization from the tin-carbon system has been studied at 7 GPa and temperatures ranging from 1600 to 1900 °C with reaction times from 1 to 20 h. Both diamond growth on the seed crystals and diamond spontaneous nucleation were established, providing evidence for the catalytic ability of tin. A distinctive feature of the Sn-C system is the existence of a significant induction period preceding diamond spontaneous nucleation. Temperature and kinetics are found to be the main factors governing diamond crystallization process. The minimum parameters of diamond spontaneous nucleation are determined to be 7 GPa, 1700 °C and 20 h. The stable form of diamond growth is octahedron and it does not depend on temperature. Synthesized diamonds contain high concentrations of nitrogen impurities up to about 1600 ppm.

KW - Defect characterization

KW - High pressure high temperature

KW - Nitrogen impurities

KW - Solvent-catalysts

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