Аннотация
We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.
Язык оригинала | английский |
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Название основной публикации | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC |
Издатель | Institute of Electrical and Electronics Engineers Inc. |
Страницы | 3468-3472 |
Число страниц | 5 |
ISBN (электронное издание) | 9781538685297 |
DOI | |
Состояние | Опубликовано - 26 ноя 2018 |
Событие | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, Соединенные Штаты Америки Продолжительность: 10 июн 2018 → 15 июн 2018 |
Конференция
Конференция | 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 |
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Страна | Соединенные Штаты Америки |
Город | Waikoloa Village |
Период | 10.06.2018 → 15.06.2018 |