Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

Malte Kohler; Alexandr Zamchiy; Manuel Pomaska; Andreas Lambertz; Florian Lentz; Weiyuan Duan; Vladimir Smirnov; Friedhelm Finger; Uwe Rau; Kaining Ding

doi:10.1109/PVSC.2018.8548008

Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

Malte Kohler, Alexandr Zamchiy, Manuel Pomaska, Andreas Lambertz, Florian Lentz, Weiyuan Duan, Vladimir Smirnov, Friedhelm Finger, Uwe Rau, Kaining Ding

Кафедра общей физики ФФ

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › рецензирование

3 Цитирования (Scopus)

Аннотация

We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.

Язык оригинала	английский
Название основной публикации	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Издатель	Institute of Electrical and Electronics Engineers Inc.
Страницы	3468-3472
Число страниц	5
ISBN (электронное издание)	9781538685297
DOI	https://doi.org/10.1109/PVSC.2018.8548008
Состояние	Опубликовано - 26 ноя 2018
Событие	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, Соединенные Штаты Америки Продолжительность: 10 июн 2018 → 15 июн 2018

Конференция

Конференция	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Страна	Соединенные Штаты Америки
Город	Waikoloa Village
Период	10.06.2018 → 15.06.2018

Доступ к документу

10.1109/PVSC.2018.8548008

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Kohler, M., Zamchiy, A., Pomaska, M., Lambertz, A., Lentz, F., Duan, W., Smirnov, V., Finger, F., Rau, U., & Ding, K. (2018). Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. В 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (стр. 3468-3472). [8548008] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548008

Kohler, Malte ; Zamchiy, Alexandr ; Pomaska, Manuel ; Lambertz, Andreas ; Lentz, Florian ; Duan, Weiyuan ; Smirnov, Vladimir ; Finger, Friedhelm ; Rau, Uwe ; Ding, Kaining. / Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 3468-3472

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title = "Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells",

abstract = "We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.",

keywords = "passivated contact, photovoltaic cells, selected contact, silicon, silicon carbide, transparent passivated contact, tunneling",

author = "Malte Kohler and Alexandr Zamchiy and Manuel Pomaska and Andreas Lambertz and Florian Lentz and Weiyuan Duan and Vladimir Smirnov and Friedhelm Finger and Uwe Rau and Kaining Ding",

year = "2018",

month = nov,

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note = "7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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Kohler, M, Zamchiy, A, Pomaska, M, Lambertz, A, Lentz, F, Duan, W, Smirnov, V, Finger, F, Rau, U & Ding, K 2018, Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. в 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548008, Institute of Electrical and Electronics Engineers Inc., стр. 3468-3472, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, Соединенные Штаты Америки, 10.06.2018. https://doi.org/10.1109/PVSC.2018.8548008

Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. / Kohler, Malte; Zamchiy, Alexandr; Pomaska, Manuel; Lambertz, Andreas; Lentz, Florian; Duan, Weiyuan; Smirnov, Vladimir; Finger, Friedhelm; Rau, Uwe; Ding, Kaining.

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. стр. 3468-3472 8548008.

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › рецензирование

TY - GEN

T1 - Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells

AU - Kohler, Malte

AU - Zamchiy, Alexandr

AU - Pomaska, Manuel

AU - Lambertz, Andreas

AU - Lentz, Florian

AU - Duan, Weiyuan

AU - Smirnov, Vladimir

AU - Finger, Friedhelm

AU - Rau, Uwe

AU - Ding, Kaining

PY - 2018/11/26

Y1 - 2018/11/26

N2 - We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.

AB - We present a new transparent passivated contact concept utilizing microcrystalline silicon carbide and an ultra-thin silicon tunnel oxide ( \mu \mathrm{c} -SiC:H(n)/SiO) for the front side of silicon heterojunction solar cells. We investigated different oxidation agents in combination with selected deposition conditions of the \mu \mathrm{c} -SiC:H(n) to find the ideal parameters for high passivation quality and high conductivity. Implied open-circuit voltages up to 728 mV were achieved without any post-deposition treatment e.g. high temperature or forming gas annealing. The transparent passivated contact solar cells show increased quantum efficiency in the short wavelength range as compared to the conventional silicon heterojunction solar cells. These insights show the great potential for the transparent passivated contact front side.

KW - passivated contact

KW - photovoltaic cells

KW - selected contact

KW - silicon

KW - silicon carbide

KW - transparent passivated contact

KW - tunneling

UR - http://www.scopus.com/inward/record.url?scp=85059913293&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2018.8548008

DO - 10.1109/PVSC.2018.8548008

M3 - Conference contribution

AN - SCOPUS:85059913293

SP - 3468

EP - 3472

BT - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018

Y2 - 10 June 2018 through 15 June 2018

ER -

Kohler M, Zamchiy A, Pomaska M, Lambertz A, Lentz F, Duan W и соавт. Development of a Transparent Passivated Contact as a Front Side Contact for Silicon Heterojunction Solar Cells. В 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. стр. 3468-3472. 8548008 https://doi.org/10.1109/PVSC.2018.8548008