Determination of trap density in hafnia films produced by two atomic layer deposition techniques

D. R. Islamov; V. A. Gritsenko; M. S. Lebedev

doi:10.1016/j.mee.2017.05.004

Determination of trap density in hafnia films produced by two atomic layer deposition techniques

D. R. Islamov, V. A. Gritsenko, M. S. Lebedev

Результат исследования: Научные публикации в периодических изданиях › статья

3 Цитирования (Scopus)

Аннотация

In this study, we report on the experimental determination of trap density in hafnia (HfO₂) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H₂O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO₂ films.

Язык оригинала	английский
Страницы (с-по)	104-107
Число страниц	4
Журнал	Microelectronic Engineering
Том	178
DOI	https://doi.org/10.1016/j.mee.2017.05.004
Состояние	Опубликовано - 25 июн 2017

Доступ к документу

10.1016/j.mee.2017.05.004

Link to publication in Scopus

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Цитировать

Islamov, D. R., Gritsenko, V. A., & Lebedev, M. S. (2017). Determination of trap density in hafnia films produced by two atomic layer deposition techniques. Microelectronic Engineering, 178, 104-107. https://doi.org/10.1016/j.mee.2017.05.004

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abstract = "In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.",

keywords = "Atomic layer deposition, Defects, Hafnium oxide, Oxygen vacancy, DIELECTRICS",

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AU - Lebedev, M. S.

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