Determination of trap density in hafnia films produced by two atomic layer deposition techniques

D. R. Islamov; V. A. Gritsenko; M. S. Lebedev

doi:10.1016/j.mee.2017.05.004

Determination of trap density in hafnia films produced by two atomic layer deposition techniques

D. R. Islamov, V. A. Gritsenko, M. S. Lebedev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

3 Цитирования (Scopus)

Аннотация

In this study, we report on the experimental determination of trap density in hafnia (HfO₂) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H₂O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO₂ films.

Язык оригинала	английский
Страницы (с-по)	104-107
Число страниц	4
Журнал	Microelectronic Engineering
Том	178
DOI	https://doi.org/10.1016/j.mee.2017.05.004
Состояние	Опубликовано - 25 июн 2017

Доступ к документу

10.1016/j.mee.2017.05.004

Link to publication in Scopus

Fingerprint

Подробные сведения о темах исследования «Determination of trap density in hafnia films produced by two atomic layer deposition techniques». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

@article{3690e23326ac4afd8ab6c1fbc86c8df6,

title = "Determination of trap density in hafnia films produced by two atomic layer deposition techniques",

abstract = "In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.",

keywords = "Atomic layer deposition, Defects, Hafnium oxide, Oxygen vacancy, DIELECTRICS",

author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Lebedev, {M. S.}",

year = "2017",

month = jun,

day = "25",

doi = "10.1016/j.mee.2017.05.004",

language = "English",

volume = "178",

pages = "104--107",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier",

}

Determination of trap density in hafnia films produced by two atomic layer deposition techniques. / Islamov, D. R.; Gritsenko, V. A.; Lebedev, M. S.

В: Microelectronic Engineering, Том 178, 25.06.2017, стр. 104-107.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Determination of trap density in hafnia films produced by two atomic layer deposition techniques

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Lebedev, M. S.

PY - 2017/6/25

Y1 - 2017/6/25

N2 - In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.

AB - In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.

KW - Atomic layer deposition

KW - Defects

KW - Hafnium oxide

KW - Oxygen vacancy

KW - DIELECTRICS

UR - http://www.scopus.com/inward/record.url?scp=85019056486&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2017.05.004

DO - 10.1016/j.mee.2017.05.004

M3 - Article

AN - SCOPUS:85019056486

VL - 178

SP - 104

EP - 107

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -