Аннотация
In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.
Язык оригинала | английский |
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Страницы (с-по) | 104-107 |
Число страниц | 4 |
Журнал | Microelectronic Engineering |
Том | 178 |
DOI | |
Состояние | Опубликовано - 25 июн 2017 |