Determination of trap density in hafnia films produced by two atomic layer deposition techniques

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.

Язык оригиналаанглийский
Страницы (с-по)104-107
Число страниц4
ЖурналMicroelectronic Engineering
Том178
DOI
СостояниеОпубликовано - 25 июн 2017

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