Determination of the oxygen content in amorphous SiO x thin films

A. O. Zamchiy, E. A. Baranov, I. E. Merkulova, S. Ya Khmel, E. A. Maximovskiy

Результат исследования: Научные публикации в периодических изданияхстатья

2 Цитирования (Scopus)

Аннотация

The bonding structure and composition of amorphous silicon suboxide (a-SiO x , 0.25 < x < 0.75) thin films deposited by gas-jet electron beam plasma chemical vapor deposition were studied by Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectroscopy (RBS), and wavelength dispersive X-ray spectroscopy (WDS). Based on the dependence of the integrated absorption of the Si-O-Si asymmetric stretching modes normalized to the silicon atomic density on the x values evaluated by RBS, the proportionality coefficient A SiO of the Si-O-Si asymmetric stretching modes was determined to be 2 × 10 19 cm −2 . Details of the A SiO calculation, the dependence of the silicon atomic density on x, and the limits of integration were discussed. The significant overestimation of the x values obtained from the Si-O-Si stretching mode position in the IR spectra of the films in comparison with the actual values and the presence of a high-frequency shoulder centered at ~ 1140 cm −1 in the IR spectra indicates the inhomogeneity of the structure of the films. At the same time, the parameters of the Si-O-Si asymmetric stretching band (position and full width at half maximum) indicate the absence of a strict phase separation in the structure of the synthesized films, which are thus described by the intermediate model.

Язык оригиналаанглийский
Страницы (с-по)43-50
Число страниц8
ЖурналJournal of Non-Crystalline Solids
Том518
DOI
СостояниеОпубликовано - 15 авг 2019

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