Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5

I. V. Osinnykh; T. V. Malin; K. S. Zhuravlev

doi:10.1088/1742-6596/993/1/012006

Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN: Si epitaxial layers with x > 0.5

I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev

Физический факультет

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции

1 Цитирования (Scopus)

Аннотация

The photoluminescence properties of the intensive defect-related emission in heavily doped Al_xGa_l-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al_0.67Ga_0.33N.

Язык оригинала	английский
Номер статьи	012006
Число страниц	6
Журнал	Journal of Physics: Conference Series
Том	993
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/993/1/012006
Состояние	Опубликовано - 10 апр 2018
Событие	19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 ноя 2017 → 1 дек 2017

Доступ к документу

10.1088/1742-6596/993/1/012006

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Determination of the energy structure of recombination centers in heavily doped Al<sub>x</sub>Ga<sub>1-x</sub>N: Si epitaxial layers with x > 0.5». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Osinnykh, I. V., Malin, T. V., & Zhuravlev, K. S. (2018). Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN: Si epitaxial layers with x > 0.5. Journal of Physics: Conference Series, 993(1), [012006]. https://doi.org/10.1088/1742-6596/993/1/012006

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abstract = "The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.",

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Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN : Si epitaxial layers with x > 0.5. / Osinnykh, I. V.; Malin, T. V.; Zhuravlev, K. S.

В: Journal of Physics: Conference Series, Том 993, № 1, 012006, 10.04.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции

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T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

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AU - Zhuravlev, K. S.

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N2 - The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

AB - The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

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