Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5

I. V. Osinnykh; T. V. Malin; K. S. Zhuravlev

doi:10.1088/1742-6596/993/1/012006

Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN: Si epitaxial layers with x > 0.5

I. V. Osinnykh, T. V. Malin, K. S. Zhuravlev

Физический факультет

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

1 Цитирования (Scopus)

Аннотация

The photoluminescence properties of the intensive defect-related emission in heavily doped Al_xGa_l-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al_0.67Ga_0.33N.

Язык оригинала	английский
Номер статьи	012006
Число страниц	6
Журнал	Journal of Physics: Conference Series
Том	993
Номер выпуска	1
DOI	https://doi.org/10.1088/1742-6596/993/1/012006
Состояние	Опубликовано - 10 апр 2018
Событие	19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 ноя 2017 → 1 дек 2017

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10.1088/1742-6596/993/1/012006

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title = "Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5",

abstract = "The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.",

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author = "Osinnykh, {I. V.} and Malin, {T. V.} and Zhuravlev, {K. S.}",

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Determination of the energy structure of recombination centers in heavily doped Al_xGa_1-xN : Si epitaxial layers with x > 0.5. / Osinnykh, I. V.; Malin, T. V.; Zhuravlev, K. S.

В: Journal of Physics: Conference Series, Том 993, № 1, 012006, 10.04.2018.

Результат исследования: Научные публикации в периодических изданиях › статья по материалам конференции › рецензирование

TY - JOUR

T1 - Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Zhuravlev, K. S.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

AB - The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

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DO - 10.1088/1742-6596/993/1/012006

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AN - SCOPUS:85046105143

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

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Y2 - 27 November 2017 through 1 December 2017

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