Аннотация
The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.
Язык оригинала | английский |
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Номер статьи | 012006 |
Число страниц | 6 |
Журнал | Journal of Physics: Conference Series |
Том | 993 |
Номер выпуска | 1 |
DOI | |
Состояние | Опубликовано - 10 апр 2018 |
Событие | 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 - St. Petersburg, Российская Федерация Продолжительность: 27 ноя 2017 → 1 дек 2017 |