This paper presents the results of studies of the luminescence properties of structures with Ge(Si) quantum dots (QDs), in which the pit-patterned surface of a silicon-on-insulator substrate serves both for the spatial ordering of QDs and the formation of a two-dimensional photonic crystal. It is shown that by choosing the parameters of the pit-patterned substrate (the diameter of the pits and the period of their location), it is possible to provide a significant increase in the intensity of the QD luminescence signal in the near infrared range. This enhancement is associated with the interaction of spatially ordered QD emission with the modes of a photonic crystal formed by the pattern of pits. The effect of amplification of the luminescence signal is retained up to room temperature.
Предметные области OECD FOS+WOS
- 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
- 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ