Cyclotron-resonance-induced photogalvanic effect in surface states of 200-nm-thick strained HgTe films

S. Candussio, G. V. Budkin, M. Otteneder, D. A. Kozlov, I. A. Dmitriev, V. V. Bel'Kov, Z. D. Kvon, N. N. Mikhailov, S. A. Dvoretsky, S. D. Ganichev

Результат исследования: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

We report on the study of magnetophotogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.

Язык оригиналаанглийский
Номер статьи054205
Число страниц11
ЖурналPhysical Review Materials
Том3
Номер выпуска5
DOI
СостояниеОпубликовано - 23 мая 2019

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