Conductive indium nanowires deposited on silicon surface by dip-pen nanolithography

A. S. Kozhukhov, D. V. Shcheglov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Conductive indium nanowires up to 50 nm in width and up to 10 μm in length are fabricated on the surface of silicon by local resputtering from the probe of an atomic-force microscope. To accomplish this, indium was transferred from an atomic force microscopy tip to the surface by applying a potential difference between the tip and substrate. The fabricated indium nanowires were several micrometers in length. Unlike thermal DPN, our DPN method hardly oxidized the indium, producing nanowires with conductivities from 5.7 • 10-3 to 4 • 10-2 Ω•cm.

Язык оригиналаанглийский
Номер статьи032005
Число страниц3
ЖурналJournal of Physics: Conference Series
Том917
Номер выпуска3
DOI
СостояниеОпубликовано - 23 ноя 2017

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