Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

V. V. Atuchin, M. S. Lebedev, I. V. Korolkov, V. N. Kruchinin, E. A. Maksimovskii, S. V. Trubin

Результат исследования: Научные публикации в периодических изданияхстатья

6 Цитирования (Scopus)

Аннотация

The optical quality HfxTi1−xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)4, TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the HfxTi1−xO2 (x = 0–1) films via the chemical composition variation and annealing.

Язык оригиналаанглийский
Страницы (с-по)812-823
Число страниц12
ЖурналJournal of Materials Science: Materials in Electronics
Том30
Номер выпуска1
DOI
СостояниеОпубликовано - 15 янв 2019

    Fingerprint

Цитировать