Comparison of flash-memory elements using materials based on graphene

I. V. Antonova, I. A. Kotin, O. M. Orlov, S. F. Devyatova

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Charge capture on flash-memory test structures with floating gates made of graphene (few-layer graphene) and its compounds (graphene oxide and partially fluorinated graphene) is investigated. A comparison of the memory window for different structures has shown the potential of using reduced graphene oxide, graphene with only a few layers, and fluorographene. For the first time, partially fluorinated graphene has been employed as a floating gate in flash-memory structures. Graphene-based materials are promising for 2D printing technologies and flexible electronics.

Язык оригиналаанглийский
Страницы (с-по)889-892
Число страниц4
ЖурналTechnical Physics Letters
Том43
Номер выпуска10
DOI
СостояниеОпубликовано - 1 окт 2017

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