Charge transport mechanism of high-resistive state in RRAM based on SiOx

A. A. Gismatulin, V. N. Kruchinin, V. A. Gritsenko, I. P. Prosvirin, T. J. Yen, A. Chin

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

10 Цитирования (Scopus)

Аннотация

Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.

Язык оригиналаанглийский
Номер статьи033503
Число страниц5
ЖурналApplied Physics Letters
Том114
Номер выпуска3
DOI
СостояниеОпубликовано - 21 янв 2019

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