Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures

P. A. Bokhan, K. S. Zhuravlev, D. E. Zakrevsky, T. V. Malin, I. V. Osinnykh, N. V. Fateev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование


The spectral characteristics of spontaneous and stimulated luminescence of heavily silicon-doped Al (x) Ga1 - x N structures with the concentration n (Si) > 1020 cm(-3) are studied with pulsed optical pumping at lambda = 266 nm. The resulting dominant broadband radiation with a full width at half maximum of similar to 150 nm covers the whole visible spectral region. The radiation spectrum from the end of the structure is split into narrow components determined by the mode structure of the planar waveguide formed. The results indicate the stimulated character of the radiation. The optical gain for different structures fall in the range 20-70 cm(-1).

Язык оригиналаанглийский
Страницы (с-по)405-409
Число страниц5
ЖурналAtmospheric and Oceanic Optics
Номер выпуска4
СостояниеОпубликовано - 1 июл. 2018


Подробные сведения о темах исследования «Broadband Spontaneous and Stimulated Luminescence of Heavily Doped AlxGa1 – xN Structures». Вместе они формируют уникальный семантический отпечаток (fingerprint).