Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

N. N. Rubtsova; G. M. Borisov; V. G. Gol’dort; A. A. Kovalyov; D. V. Ledovskikh; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin

doi:10.3103/S8756699019050030

Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

N. N. Rubtsova, G. M. Borisov, V. G. Gol’dort, A. A. Kovalyov, D. V. Ledovskikh, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Кафедра общей физики ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

Язык оригинала	английский
Страницы (с-по)	437-440
Число страниц	4
Журнал	Optoelectronics, Instrumentation and Data Processing
Том	55
Номер выпуска	5
DOI	https://doi.org/10.3103/S8756699019050030
Состояние	Опубликовано - 1 сент. 2019

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10.3103/S8756699019050030

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@article{ea4765763d8c4df997472246b62a538d,

title = "Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers",

abstract = "Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.",

keywords = "passive mode locking of lasers, quantum well, semiconductor mirrors with saturable absorption",

author = "Rubtsova, {N. N.} and Borisov, {G. M.} and Gol{\textquoteright}dort, {V. G.} and Kovalyov, {A. A.} and Ledovskikh, {D. V.} and Preobrazhenskii, {V. V.} and Putyato, {M. A.} and Semyagin, {B. R.}",

year = "2019",

month = sep,

day = "1",

doi = "10.3103/S8756699019050030",

language = "English",

volume = "55",

pages = "437--440",

journal = "Optoelectronics, Instrumentation and Data Processing",

issn = "8756-6990",

publisher = "Allerton Press Inc.",

number = "5",

}

Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers. / Rubtsova, N. N.; Borisov, G. M.; Gol’dort, V. G. и др.

В: Optoelectronics, Instrumentation and Data Processing, Том 55, № 5, 01.09.2019, стр. 437-440.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

AU - Rubtsova, N. N.

AU - Borisov, G. M.

AU - Gol’dort, V. G.

AU - Kovalyov, A. A.

AU - Ledovskikh, D. V.

AU - Preobrazhenskii, V. V.

AU - Putyato, M. A.

AU - Semyagin, B. R.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

AB - Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

KW - passive mode locking of lasers

KW - quantum well

KW - semiconductor mirrors with saturable absorption

UR - http://www.scopus.com/inward/record.url?scp=85078324855&partnerID=8YFLogxK

U2 - 10.3103/S8756699019050030

DO - 10.3103/S8756699019050030

M3 - Article

AN - SCOPUS:85078324855

VL - 55

SP - 437

EP - 440

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -