Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers

N. N. Rubtsova, G. M. Borisov, V. G. Gol’dort, A. A. Kovalyov, D. V. Ledovskikh, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Two types of mirror structures with saturable absorption are under consideration: monolithic mirrors grown from semiconductor materials and mirrors with a dielectric reflector, with quantum well containing semiconductor structures transferred to the dielectric. Both types of mirrors manifest high reflectivity in the NIR range of the spectrum: the table width is about 100 nm for semiconductor reflectors and more than 200 nm for dielectric reflectors. It is shown that a maximum depth of absorption modulation from 1 to 40% is possible. The recovery time of the saturable absorber (2 ps) makes these mirrors significantly fit for using in lasers with a pulse repetition rate of 1 GHz.

Язык оригиналаанглийский
Страницы (с-по)437-440
Число страниц4
ЖурналOptoelectronics, Instrumentation and Data Processing
Том55
Номер выпуска5
DOI
СостояниеОпубликовано - 1 сен 2019

Fingerprint Подробные сведения о темах исследования «Broadband Semiconductor Mirrors with a Small Relaxation Time for Passive Mode-Locking of NIR Lasers». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать