Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

D. E. Utkin; A. V. Tsarev; E. N. Utkin; A. V. Latyshev; A. A. Shklyaev

doi:10.3103/S8756699021050162

Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles

Переведенное название: Широкополосные просветляющие покрытия из частиц SiGe субволнового размера

D. E. Utkin, A. V. Tsarev, E. N. Utkin, A. V. Latyshev, A. A. Shklyaev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Исследованы антиотражающие свойства покрытий из диэлектрических частиц SiGe субволнового размера, выращенных на подложках Si(100) c использованием эффекта несмачиваемости Si слоями SiGe. Средний размер частиц задавался количеством осаждённого Ge и варьировался в диапазоне от 0,2 до 1,4 мкм. Изучаемое возбуждение магнитных и электрических резонансов в диэлектрических частицах SiGe приводило к уменьшению отражения приблизительно на 60 % в зависимости от среднего размера частиц по сравнению с отражением поверхности Si, не покрытой частицами. Распределение частиц по размеру обеспечило получение антиотражающих свойств в широком спектральном диапазоне, в котором частицы меньшего размера создавали более сильный антиотражающий эффект по сравнению с частицами большего размера. Модельные расчёты показали, что для частиц, расположенных на подложке, эффективность возбуждения магнитных и электрических резонансов имеет сильную зависимость от отношения высоты частиц к размеру их основания.

Переведенное название	Широкополосные просветляющие покрытия из частиц SiGe субволнового размера
Язык оригинала	английский
Страницы (с-по)	494-504
Число страниц	11
Журнал	Optoelectronics, Instrumentation and Data Processing
Том	57
Номер выпуска	5
DOI	https://doi.org/10.3103/S8756699021050162
Состояние	Опубликовано - 1 сент. 2021

Предметные области OECD FOS+WOS

1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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title = "Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles",

abstract = "Antireflection properties of subwavelength-sized dielectric SiGe particles grown on Si(100) substrates using the dewetting phenomenon are studied. The average particle size has been set by the amount of deposited Ge in the range from 0.2 to 1.4 μm. The studied excitation of magnetic and electric resonances in dielectric SiGe particles has led to a decrease in reflection by approximately 60% depending on the average particle size compared to the reflection of the Si surface not covered with particles. The particle size distribution has provided antireflection properties over a wide spectral range, in which small particles created a stronger antireflection effect than large ones. Model calculations have shown that, for particles on the substrate, the efficiency of excitation of magnetic and electric resonances has a strong dependence on the ratio of particle height to particle base size.",

keywords = "antireflection properties, FDTD method, metasurfaces, Mie resonances, numerical simulation, SiGe particles on Si",

author = "Utkin, {D. E.} and Tsarev, {A. V.} and Utkin, {E. N.} and Latyshev, {A. V.} and Shklyaev, {A. A.}",

note = "This work was supported by the Russian Science Foundation, project no. 19-72-30023. The experiments were carried out using the equipment of the CKP {"}NANOSTRUKTURY{"} of the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences and CKP {"}VTAN{"} (ATRC) of the NSU Physics Department.",

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Broadband Antireflection Coatings Composed of Subwavelength-Sized SiGe Particles. / Utkin, D. E.; Tsarev, A. V.; Utkin, E. N. и др.

В: Optoelectronics, Instrumentation and Data Processing, Том 57, № 5, 01.09.2021, стр. 494-504.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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AU - Latyshev, A. V.

AU - Shklyaev, A. A.

N1 - This work was supported by the Russian Science Foundation, project no. 19-72-30023. The experiments were carried out using the equipment of the CKP "NANOSTRUKTURY" of the Rzhanov Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences and CKP "VTAN" (ATRC) of the NSU Physics Department.

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