Bright luminescence of diamonds with Ge-V centers

K. N. Boldyrev, B. N. Mavrin, P. S. Sherin, M. N. Popova

Результат исследования: Научные публикации в периодических изданияхстатья

13 Цитирования (Scopus)


We report on the quantum yield (η) and decay time (τ) measurements at room temperature for the bright red-orange (602 nm) luminescence from new germanium-vacancy (Ge-V) centers in nano- and microcrystalline diamonds synthesized at high pressure and high temperature. The values η = 3 ± 1% and τ = 6.2±0.2 ns were found. The Stokes shift measured as the energy difference between the maxima of the luminescence and luminescence excitation spectra is negligible. The relative intensity of the zero-phonon line constitutes up to 70% of the total intensity of the luminescence. Results of our ab initio DFT calculations for the ground-state electronic and vibrational structure of (Ge-V)- in diamond are presented and discussed.

Язык оригиналаанглийский
Страницы (с-по)119-124
Число страниц6
ЖурналJournal of Luminescence
СостояниеОпубликовано - 1 янв 2018

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