Аннотация
We report on the quantum yield (η) and decay time (τ) measurements at room temperature for the bright red-orange (602 nm) luminescence from new germanium-vacancy (Ge-V) centers in nano- and microcrystalline diamonds synthesized at high pressure and high temperature. The values η = 3 ± 1% and τ = 6.2±0.2 ns were found. The Stokes shift measured as the energy difference between the maxima of the luminescence and luminescence excitation spectra is negligible. The relative intensity of the zero-phonon line constitutes up to 70% of the total intensity of the luminescence. Results of our ab initio DFT calculations for the ground-state electronic and vibrational structure of (Ge-V)- in diamond are presented and discussed.
Язык оригинала | английский |
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Страницы (с-по) | 119-124 |
Число страниц | 6 |
Журнал | Journal of Luminescence |
Том | 193 |
DOI | |
Состояние | Опубликовано - 1 янв 2018 |