Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique

P. V. Kasimkin, A. F. Kurus, V. N. Shlegel, Y. V. Vasiliev, O. I. Podkopaev

Результат исследования: Научные публикации в периодических изданияхстатья

Выдержка

The initial stage of germanium crystal growth by the low thermal gradient Czochralski technique of pulling from the melt (LTG CZ) has been studied in a series of experiments, in which the processes have been interrupted after pulling 6 mm in dia., 70–80 mm in length crystal rod and then up to 20 mm long a cone part. The axial gradients estimated from computer modelling were 2–2.5 K/cm. Crystals pulled in 〈1 1 1〉 direction with totally faceted interface were dislocation-free if facet formation was not disturbed. Crystals pulled along 〈1 0 0〉 under identical conditions, had rounded interface due to thermal roughens of (1 0 0) faces. In that case, the dislocation density was low, but not below ~102 cm−2.

Язык оригиналаанглийский
Номер статьи125375
Число страниц6
ЖурналJournal of Crystal Growth
Том531
DOI
СостояниеОпубликовано - 1 фев 2020

Отпечаток

liquid-solid interfaces
Crystallization
Crystal growth
Thermal gradients
crystal growth
pulling
gradients
Crystals
propagation
Liquids
Germanium
crystals
Cones
flat surfaces
germanium
cones
rods
Experiments

Цитировать

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title = "Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique",
abstract = "The initial stage of germanium crystal growth by the low thermal gradient Czochralski technique of pulling from the melt (LTG CZ) has been studied in a series of experiments, in which the processes have been interrupted after pulling 6 mm in dia., 70–80 mm in length crystal rod and then up to 20 mm long a cone part. The axial gradients estimated from computer modelling were 2–2.5 K/cm. Crystals pulled in 〈1 1 1〉 direction with totally faceted interface were dislocation-free if facet formation was not disturbed. Crystals pulled along 〈1 0 0〉 under identical conditions, had rounded interface due to thermal roughens of (1 0 0) faces. In that case, the dislocation density was low, but not below ~102 cm−2.",
keywords = "A1. Computer simulation, A1. Defects, A2. Czochralski method, A2. Growth from melt, A2. LTG Cz, B2. Semiconducting germanium, LTG Cz, Czochralski method, Growth from melt, Defects Computer simulation, Semiconducting germanium",
author = "Kasimkin, {P. V.} and Kurus, {A. F.} and Shlegel, {V. N.} and Vasiliev, {Y. V.} and Podkopaev, {O. I.}",
year = "2020",
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Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique. / Kasimkin, P. V.; Kurus, A. F.; Shlegel, V. N.; Vasiliev, Y. V.; Podkopaev, O. I.

В: Journal of Crystal Growth, Том 531, 125375, 01.02.2020.

Результат исследования: Научные публикации в периодических изданияхстатья

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T1 - Blocking of dislocation propagation by faceted solid liquid interface during Ge crystal growth by the low thermal gradient Czochralski technique

AU - Kasimkin, P. V.

AU - Kurus, A. F.

AU - Shlegel, V. N.

AU - Vasiliev, Y. V.

AU - Podkopaev, O. I.

PY - 2020/2/1

Y1 - 2020/2/1

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KW - Czochralski method

KW - Growth from melt

KW - Defects Computer simulation

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