Barrier characteristics and interface properties of Au/Ti/n-InAlAs Schottky contacts

I. B. Chistokhin, M. S. Aksenov, N. A. Valisheva, D. V. Dmitriev, A. P. Kovchavtsev, A. K. Gutakovskii, I. P. Prosvirin, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья

9 Цитирования (Scopus)

Аннотация

The InAlAs surface morphology (AFM), chemical composition (XPS) and the Ti/InAlAs interface structure (HREM), during the Au/Ti/n-In0.52Al0.48As/InP(001) mesa-structure Schottky barrier formation, were studied. The current-voltage (I-V) dependences analysis of the formed Schottky barrier in the temperature range of 100–380 K was carried out. It was shown that the I-V dependences are well described by the thermionic emission theory at temperatures above 200 K with the ideality factor and the barrier height close to 1.09 and 0.7 eV, respectively. At temperatures below 200 K, the I-V behavior is attributed to the Schottky barrier anomalies, which are explained by the existence of nanometer-sized patches with a low barrier height having a Gaussian distribution (Tung model). According to this model, the temperature dependences of the barrier height and ideality factor were described with the following parameters: the homogeneous barrier height of 0.88 eV and standard deviation of 10−4 cm2/3V1/3. In the analysis of the modified Richardson plot, the Richardson constant (10.7 Acm−2 K−2) and the area fraction (24%), occupied by the patches with a low barrier height and diameter ~80 nm, were calculated. The patches appearance is explained by the presence of the spikes detected on the InAlAs surface by the AFM method.

Язык оригиналаанглийский
Страницы (с-по)193-198
Число страниц6
ЖурналMaterials Science in Semiconductor Processing
Том74
DOI
СостояниеОпубликовано - 1 фев 2018

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