Band structure of a HgTe-based three-dimensional topological insulator

J. Gospodarič, V. Dziom, A. Shuvaev, A. A. Dobretsova, N. N. Mikhailov, Z. D. Kvon, E. G. Novik, A. Pimenov

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование

3 Цитирования (Scopus)


From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the k·p model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.

Язык оригиналаанглийский
Номер статьи115113
Число страниц9
ЖурналPhysical Review B
Номер выпуска11
СостояниеОпубликовано - сент. 2020


Подробные сведения о темах исследования «Band structure of a HgTe-based three-dimensional topological insulator». Вместе они формируют уникальный семантический отпечаток (fingerprint).