Аннотация
The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.
Язык оригинала | английский |
---|---|
Название основной публикации | Advances in Semiconductor Nanostructures |
Подзаголовок основной публикации | Growth, Characterization, Properties and Applications |
Редакторы | AV Latyshev, AV Dvurechenskii, AL Aseev |
Издатель | Elsevier Science Inc. |
Страницы | 223-253 |
Число страниц | 31 |
ISBN (электронное издание) | 9780128105139 |
ISBN (печатное издание) | 9780128105122 |
DOI | |
Состояние | Опубликовано - 1 янв. 2017 |