Atomic Structure of Semiconductor Low-Dimensional Heterosystems

A. K. Gutakovskii; Alexander V. Latyshev; Alexander L. Aseev

doi:10.1016/B978-0-12-810512-2.00009-3

Atomic Structure of Semiconductor Low-Dimensional Heterosystems

A. K. Gutakovskii, Alexander V. Latyshev, Alexander L. Aseev

Кафедра физики полупроводников ФФ

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › рецензирование

Аннотация

The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.

Язык оригинала	английский
Название основной публикации	Advances in Semiconductor Nanostructures
Подзаголовок основной публикации	Growth, Characterization, Properties and Applications
Редакторы	AV Latyshev, AV Dvurechenskii, AL Aseev
Издатель	Elsevier Science Inc.
Страницы	223-253
Число страниц	31
ISBN (электронное издание)	9780128105139
ISBN (печатное издание)	9780128105122
DOI	https://doi.org/10.1016/B978-0-12-810512-2.00009-3
Состояние	Опубликовано - 1 янв 2017

Доступ к документу

10.1016/B978-0-12-810512-2.00009-3

Link to publication in Scopus

Fingerprint Подробные сведения о темах исследования «Atomic Structure of Semiconductor Low-Dimensional Heterosystems». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать

Gutakovskii, A. K., Latyshev, A. V., & Aseev, A. L. (2017). Atomic Structure of Semiconductor Low-Dimensional Heterosystems. В AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (стр. 223-253). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00009-3

@inbook{55097bb323f64fb7838d9939ff9734ee,

title = "Atomic Structure of Semiconductor Low-Dimensional Heterosystems",

abstract = "The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.",

keywords = "Heterosystem, High-resolution electron microscopy, Low-dimensional semiconductor systems, Semiconductor, DISLOCATIONS, ORIGIN, HREM, MECHANISM, STRAIN",

author = "Gutakovskii, {A. K.} and Latyshev, {Alexander V.} and Aseev, {Alexander L.}",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/B978-0-12-810512-2.00009-3",

language = "English",

isbn = "9780128105122",

pages = "223--253",

editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",

booktitle = "Advances in Semiconductor Nanostructures",

publisher = "Elsevier Science Inc.",

address = "United States",

}

Atomic Structure of Semiconductor Low-Dimensional Heterosystems. / Gutakovskii, A. K.; Latyshev, Alexander V.; Aseev, Alexander L.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. стр. 223-253.

Результат исследования: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › рецензирование

TY - CHAP

T1 - Atomic Structure of Semiconductor Low-Dimensional Heterosystems

AU - Gutakovskii, A. K.

AU - Latyshev, Alexander V.

AU - Aseev, Alexander L.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.

AB - The results of using HRTEM to study the real structure of low-dimensional systems at the atomic level, obtained in Institute of Semiconductor Physics of Siberian Branch of Russian Academy Science (ISP SB RAS) for the last decades, are the main content of the present contribution. Besides, the main potentials and a brief description of the HRTEM method, and the methodic base for investigating and analyzing the atomic structure of low-dimensional semiconductor systems are considered in the first informational part of the work.

KW - Heterosystem

KW - High-resolution electron microscopy

KW - Low-dimensional semiconductor systems

KW - Semiconductor

KW - DISLOCATIONS

KW - ORIGIN

KW - HREM

KW - MECHANISM

KW - STRAIN

UR - http://www.scopus.com/inward/record.url?scp=85022223504&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00009-3

DO - 10.1016/B978-0-12-810512-2.00009-3

M3 - Chapter

SN - 9780128105122

SP - 223

EP - 253

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -