Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

V. V. Bakin; S. N. Kosolobov; S. A. Rozhkov; H. E. Scheibler; A. S. Terekhov

doi:10.1134/S0021364018150031

Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

V. V. Bakin, S. N. Kosolobov, S. A. Rozhkov, H. E. Scheibler, A. S. Terekhov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.

Язык оригинала	английский
Страницы (с-по)	180-184
Число страниц	5
Журнал	JETP Letters
Том	108
Номер выпуска	3
DOI	https://doi.org/10.1134/S0021364018150031
Состояние	Опубликовано - 1 авг. 2018

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10.1134/S0021364018150031

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@article{0ea7f26a35384256aab3c3b6b147aa33,

title = "Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface",

abstract = "Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.",

keywords = "NEGATIVE ELECTRON-AFFINITY, P-GAN(0001) SURFACES, GAAS-CS, PHOTOELECTRONS, PHOTOCATHODE, ADSORPTION, STATES",

author = "Bakin, {V. V.} and Kosolobov, {S. N.} and Rozhkov, {S. A.} and Scheibler, {H. E.} and Terekhov, {A. S.}",

note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Inc.",

year = "2018",

month = aug,

day = "1",

doi = "10.1134/S0021364018150031",

language = "English",

volume = "108",

pages = "180--184",

journal = "JETP Letters",

issn = "0021-3640",

publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",

number = "3",

}

Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface. / Bakin, V. V.; Kosolobov, S. N.; Rozhkov, S. A. и др.

В: JETP Letters, Том 108, № 3, 01.08.2018, стр. 180-184.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Atomic Rearrangements and Photoemission Processes at a p-GaN(Cs)–Vacuum Interface

AU - Bakin, V. V.

AU - Kosolobov, S. N.

AU - Rozhkov, S. A.

AU - Scheibler, H. E.

AU - Terekhov, A. S.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.

AB - Spontaneous changes in photoemission properties of a р-GaN(Cs)–vacuum interface with effective negative electronic affinity induced by rearrangements of its atomic structure have been studied for the first time. The optimum Сs coating that ensures both the maximum photoelectron escape probability and its stability has been found. A thermodynamic model has been proposed to escape the relation of the photoemission properties of the р-GaN(Cs)–vacuum interface to its free energy and entropy.

KW - NEGATIVE ELECTRON-AFFINITY

KW - P-GAN(0001) SURFACES

KW - GAAS-CS

KW - PHOTOELECTRONS

KW - PHOTOCATHODE

KW - ADSORPTION

KW - STATES

UR - http://www.scopus.com/inward/record.url?scp=85055270504&partnerID=8YFLogxK

U2 - 10.1134/S0021364018150031

DO - 10.1134/S0021364018150031

M3 - Article

AN - SCOPUS:85055270504

VL - 108

SP - 180

EP - 184

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 3

ER -