Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova; A. S. Kozhukhov; E. B. Gorokhov; I. A. Azarov; A. V. Latyshev

doi:10.1134/S1063782618160030

Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova, A. S. Kozhukhov, E. B. Gorokhov, I. A. Azarov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданиях › статья

Аннотация

Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

Язык оригинала	английский
Страницы (с-по)	2081-2084
Число страниц	4
Журнал	Semiconductors
Том	52
Номер выпуска	16
DOI	https://doi.org/10.1134/S1063782618160030
Состояние	Опубликовано - 1 дек 2018

Доступ к документу

10.1134/S1063782618160030

Link to publication in Scopus

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abstract = "Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.",

keywords = "NANO-OXIDATION, HUMIDITY",

author = "Astankova, {K. N.} and Kozhukhov, {A. S.} and Gorokhov, {E. B.} and Azarov, {I. A.} and Latyshev, {A. V.}",

year = "2018",

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AU - Astankova, K. N.

AU - Kozhukhov, A. S.

AU - Gorokhov, E. B.

AU - Azarov, I. A.

AU - Latyshev, A. V.

PY - 2018/12/1

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N2 - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

AB - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

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