Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova, A. S. Kozhukhov, E. B. Gorokhov, I. A. Azarov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданияхстатьярецензирование


Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

Язык оригиналаанглийский
Страницы (с-по)2081-2084
Число страниц4
Номер выпуска16
СостояниеОпубликовано - 1 дек. 2018


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