Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova; A. S. Kozhukhov; E. B. Gorokhov; I. A. Azarov; A. V. Latyshev

doi:10.1134/S1063782618160030

Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova, A. S. Kozhukhov, E. B. Gorokhov, I. A. Azarov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

Аннотация

Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

Язык оригинала	английский
Страницы (с-по)	2081-2084
Число страниц	4
Журнал	Semiconductors
Том	52
Номер выпуска	16
DOI	https://doi.org/10.1134/S1063782618160030
Состояние	Опубликовано - 1 дек 2018

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10.1134/S1063782618160030

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@article{0487c0716f214df68aa22033db6fc405,

title = "Atomic Force Microscopy Local Oxidation of GeO Thin Films",

abstract = "Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.",

keywords = "NANO-OXIDATION, HUMIDITY",

author = "Astankova, {K. N.} and Kozhukhov, {A. S.} and Gorokhov, {E. B.} and Azarov, {I. A.} and Latyshev, {A. V.}",

year = "2018",

month = dec,

day = "1",

doi = "10.1134/S1063782618160030",

language = "English",

volume = "52",

pages = "2081--2084",

journal = "Semiconductors",

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publisher = "PLEIADES PUBLISHING INC",

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Atomic Force Microscopy Local Oxidation of GeO Thin Films. / Astankova, K. N.; Kozhukhov, A. S.; Gorokhov, E. B.; Azarov, I. A.; Latyshev, A. V.

В: Semiconductors, Том 52, № 16, 01.12.2018, стр. 2081-2084.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - Atomic Force Microscopy Local Oxidation of GeO Thin Films

AU - Astankova, K. N.

AU - Kozhukhov, A. S.

AU - Gorokhov, E. B.

AU - Azarov, I. A.

AU - Latyshev, A. V.

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

AB - Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

KW - NANO-OXIDATION

KW - HUMIDITY

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U2 - 10.1134/S1063782618160030

DO - 10.1134/S1063782618160030

M3 - Article

AN - SCOPUS:85062150420

VL - 52

SP - 2081

EP - 2084

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 16

ER -

Atomic Force Microscopy Local Oxidation of GeO Thin Films

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