Аннотация
Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.
Язык оригинала | английский |
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Страницы (с-по) | 2081-2084 |
Число страниц | 4 |
Журнал | Semiconductors |
Том | 52 |
Номер выпуска | 16 |
DOI | |
Состояние | Опубликовано - 1 дек 2018 |