Atomic Force Microscopy Local Oxidation of GeO Thin Films

K. N. Astankova, A. S. Kozhukhov, E. B. Gorokhov, I. A. Azarov, A. V. Latyshev

Результат исследования: Научные публикации в периодических изданияхстатья

Аннотация

Abstract: Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (≥9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.

Язык оригиналаанглийский
Страницы (с-по)2081-2084
Число страниц4
ЖурналSemiconductors
Том52
Номер выпуска16
DOI
СостояниеОпубликовано - 1 дек 2018

Fingerprint Подробные сведения о темах исследования «Atomic Force Microscopy Local Oxidation of GeO Thin Films». Вместе они формируют уникальный семантический отпечаток (fingerprint).

Цитировать