Analysis of the AlN phase transition on a sapphire surface within a universal 2D lattice gas model in MBE

D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu G. Galitsyn, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья по материалам конференциирецензирование

Аннотация

The AlN phase transition on the (0001) Al2O3 surface was investigated. It was experimentally estimated that the AlN formation rate as a function of temperature has a different character in two temperature regions. In the region of relatively low temperatures (T < 1210 K), the AlN formation rate is limited by chemical reactions. At higher temperatures (T > 1210 K), the formation of an ordered AlN phase is determined by a continuous two-dimensional phase transition within the filled AlN-lattice-gas cells formed on the sapphire surface. A three-parameter isotherm is proposed to describe the process. The observed phase transition in the AlN lattice gas is a continuous phase transition or a second-order transition.

Язык оригиналаанглийский
Номер статьи012005
ЖурналJournal of Physics: Conference Series
Том1851
Номер выпуска1
DOI
СостояниеОпубликовано - 15 апр 2021
Событие22nd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2020 - St. Petersburg, Российская Федерация
Продолжительность: 23 ноя 202027 ноя 2020

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  • 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ

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