Аннотация
The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.
Язык оригинала | английский |
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Страницы (с-по) | 379-386 |
Число страниц | 8 |
Журнал | Semiconductors |
Том | 51 |
Номер выпуска | 3 |
DOI | |
Состояние | Опубликовано - 1 мар 2017 |