AlN/GaN heterostructures for normally-off transistors

K. S. Zhuravlev; T. V. Malin; V. G. Mansurov; O. E. Tereshenko; K. K. Abgaryan; D. L. Reviznikov; V. E. Zemlyakov; V. I. Egorkin; Ya M. Parnes; V. G. Tikhomirov; I. P. Prosvirin

doi:10.1134/S1063782617030277

AlN/GaN heterostructures for normally-off transistors

K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, O. E. Tereshenko, K. K. Abgaryan, D. L. Reviznikov, V. E. Zemlyakov, V. I. Egorkin, Ya M. Parnes, V. G. Tikhomirov, I. P. Prosvirin

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

4 Цитирования (Scopus)

Аннотация

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

Язык оригинала	английский
Страницы (с-по)	379-386
Число страниц	8
Журнал	Semiconductors
Том	51
Номер выпуска	3
DOI	https://doi.org/10.1134/S1063782617030277
Состояние	Опубликовано - 1 мар 2017

Доступ к документу

10.1134/S1063782617030277

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Цитировать

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title = "AlN/GaN heterostructures for normally-off transistors",

abstract = "The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.",

keywords = "ELECTRON-MOBILITY TRANSISTORS, ALGAN/GAN HETEROSTRUCTURES, HEMTS, ENHANCEMENT, MODE, VOLTAGE, F(T)",

author = "Zhuravlev, {K. S.} and Malin, {T. V.} and Mansurov, {V. G.} and Tereshenko, {O. E.} and Abgaryan, {K. K.} and Reviznikov, {D. L.} and Zemlyakov, {V. E.} and Egorkin, {V. I.} and Parnes, {Ya M.} and Tikhomirov, {V. G.} and Prosvirin, {I. P.}",

year = "2017",

month = mar,

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doi = "10.1134/S1063782617030277",

language = "English",

volume = "51",

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journal = "Semiconductors",

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number = "3",

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AlN/GaN heterostructures for normally-off transistors. / Zhuravlev, K. S.; Malin, T. V.; Mansurov, V. G.; Tereshenko, O. E.; Abgaryan, K. K.; Reviznikov, D. L.; Zemlyakov, V. E.; Egorkin, V. I.; Parnes, Ya M.; Tikhomirov, V. G.; Prosvirin, I. P.

В: Semiconductors, Том 51, № 3, 01.03.2017, стр. 379-386.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - AlN/GaN heterostructures for normally-off transistors

AU - Zhuravlev, K. S.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Tereshenko, O. E.

AU - Abgaryan, K. K.

AU - Reviznikov, D. L.

AU - Zemlyakov, V. E.

AU - Egorkin, V. I.

AU - Parnes, Ya M.

AU - Tikhomirov, V. G.

AU - Prosvirin, I. P.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

AB - The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

KW - ELECTRON-MOBILITY TRANSISTORS

KW - ALGAN/GAN HETEROSTRUCTURES

KW - HEMTS

KW - ENHANCEMENT

KW - MODE

KW - VOLTAGE

KW - F(T)

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U2 - 10.1134/S1063782617030277

DO - 10.1134/S1063782617030277

M3 - Article

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SP - 379

EP - 386

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

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