AlInSb/InSb Heterostructures for IR Photodetectors Grown by Molecular-Beam Epitaxy

M. A. Sukhanov, A. K. Bakarov, D. Yu Protasov, K. S. Zhuravlev

Результат исследования: Научные публикации в периодических изданияхстатья


A photodetector heterostructure based on AlInSb/InSb was grown by molecular-beam epitaxy. Mesostructures of different diameters were fabricated. The temperature dependence of the dark current was measured. It was demonstrated that the built-in barrier blocks the flow of majority charge carriers, thus reducing the dark-current density (relative to that for a pin structure based on InSb). The measured dependence of the dark current on the mesostructure size revealed that the bulk current component prevails over the surface one.

Язык оригиналаанглийский
Страницы (с-по)154-157
Число страниц4
ЖурналTechnical Physics Letters
Номер выпуска2
СостояниеОпубликовано - 1 фев 2020