AlInAs quantum dots

A. V. Gaisler, I. A. Derebezov, V. A. Gaisler, D. V. Dmitriev, A. I. Toropov, A. S. Kozhukhov, D. V. Shcheglov, A. V. Latyshev, A. L. Aseev

Результат исследования: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

A system of quantum dots on the basis of AlxIn1-xAs/AlyGa1-y As solid solutions has been studied. The usage of broadband AlxIn1-x solid solutions as the basis of quantum dots makes it possible to expand considerably the spectral emission range into the short-wave region, including the wavelength region near 770 nm being of interest for the design of aerospace systems of quantum cryptography. The optical characteristics of single AlxIn1-xAs quantum dots grown according to the Stranski–Krastanov mechanism are studied by the cryogenic microphotoluminescence method. The fine structure of exciton states of quantum dots is studied in the wavelength region near 770 nm. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of AlxAs1-x quantum dots.

Язык оригиналаанглийский
Страницы (с-по)103-109
Число страниц7
ЖурналJETP Letters
Том105
Номер выпуска2
DOI
СостояниеОпубликовано - 1 янв 2017

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  • Цитировать

    Gaisler, A. V., Derebezov, I. A., Gaisler, V. A., Dmitriev, D. V., Toropov, A. I., Kozhukhov, A. S., Shcheglov, D. V., Latyshev, A. V., & Aseev, A. L. (2017). AlInAs quantum dots. JETP Letters, 105(2), 103-109. https://doi.org/10.1134/S0021364017020096