Silicon photomultipliers (SiPMs) are extensively used in different fields now. They exceed photomultiplier tubes in the quantum efficiency, size and resistance to magnetic field. However, because of structure features, their dark noise rate is higher and they have additional sources of noise: cross-talk and after-pulsing. In addition, these parameters may be temperature dependent. In this article we present results of an evaluation of the dark noise rate, probabilities of cross-talk and after-pulses at different voltages and temperatures for two modern SiPMs: S13360-3050CS (HAMAMATSU) and PM1125NS-SB0 (KETEK). For comparison, the data for a previous-generation SiPM, S10362-11-100C (HAMAMATSU), are presented. To find these parameters, we performed a waveform analysis to determine the amplitude and time distributions of the pulses generated by a SiPM without an external light source. We evaluated the temperature and voltage dependences of these parameters. The measured cross-talk probability for PM1125NS-SB0 and S13360-3050CS at their optimal operating voltage is about 6%. It is two times smaller than that for S10362-11-100C. The fast component of the after-pulsing probability for PM1125NS-SB0 and S13360-3050CS is about 10%, which is also almost 2 times smaller than the sum of the fast and slow components of the after-pulsing probability for S10362-11-100C. The dark noise rate for S13360-3050CS at 20°C is just 45 kHz/mm2 in comparison with 60 kHz/mm2 for PM1125NS-SB0.