Activation transport under quantum Hall regime in HgTe-based heterostructure

S. V. Gudina, V. N. Neverov, E. G. Novik, E. V. Ilchenko, G. I. Harus, N. G. Shelushinina, S. M. Podgornykh, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

Результат исследования: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

We have measured the temperature (2.9 K < T < 50 K) and magnetic field (0 T < B < 9 T) dependences of longitudinal and Hall resistivities for HgCdTe/HgTe/HgCdTe system with HgTe quantum well width of 20.3 nm. The activation analysis of the experimental magnetoresistivity traces has been used as a quantitative tool to probe inter-Landau level distances. The activation energies were determined from the temperature dependence of the longitudinal resistivity in the regions of quantized Hall plateaus (for the filling factors ν of 1, 2 and 3) and the indications of the large values of the g factor ≅ 30-75 were found.

Язык оригиналаанглийский
Страницы (с-по)485-490
Число страниц6
ЖурналLow Temperature Physics
Том43
Номер выпуска4
DOI
СостояниеОпубликовано - 1 апр 2017

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  • Цитировать

    Gudina, S. V., Neverov, V. N., Novik, E. G., Ilchenko, E. V., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., & Dvoretsky, S. A. (2017). Activation transport under quantum Hall regime in HgTe-based heterostructure. Low Temperature Physics, 43(4), 485-490. https://doi.org/10.1063/1.4983183