Polycrystalline silicon (poly-Si) films were fabricated by gold-induced crystallization (AuIC) of amorphous silicon suboxide (a-SiOx, x = 0.2) films at temperatures of 210–275 °C. The films were studied by in situ optical microscopy, Raman spectroscopy, and X-ray diffractometry. The activation energy for AuIC of a-SiO0.2 was determined for the first time to be 1.7 ± 0.1 eV.
Предметные области OECD FOS+WOS
- 2.05 ТЕХНОЛОГИЯ МАТЕРИАЛОВ
- 1.03 ФИЗИЧЕСКИЕ НАУКИ И АСТРОНОМИЯ
- 2.03 МЕХАНИКА И МАШИНОСТРОЕНИЕ