AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

A. A. Dmitriev, I. L. Drichko, I. Yu Smirnov, A. K. Bakarov, A. A. Bykov

Результат исследования: Научные публикации в периодических изданияхстатья

1 Цитирования (Scopus)

Аннотация

The direct-current (dc) σxxdc and alternating-current (ac) σxxac=σ1−iσ2 conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of σxx exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the σ12 ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.

Язык оригиналаанглийский
Страницы (с-по)68-73
Число страниц6
ЖурналJETP Letters
Том110
Номер выпуска1
DOI
СостояниеОпубликовано - 1 июл 2019

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