A method for fabricating the ordered arrays of silicon nanopillars

L. S. Basalaeva; Yu V. Nastaushev; F. N. Dultsev

doi:10.1016/j.matpr.2017.09.005

A method for fabricating the ordered arrays of silicon nanopillars

L. S. Basalaeva, Yu V. Nastaushev, F. N. Dultsev

Учебно-научная лаборатория квантовых явлений в конденсированных системах ФФ

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

2 Цитирования (Scopus)

Аннотация

In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.

Язык оригинала	английский
Страницы (с-по)	11341-11345
Число страниц	5
Журнал	Materials Today: Proceedings
Том	4
Номер выпуска	11
DOI	https://doi.org/10.1016/j.matpr.2017.09.005
Состояние	Опубликовано - 1 янв. 2017

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10.1016/j.matpr.2017.09.005

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title = "A method for fabricating the ordered arrays of silicon nanopillars",

abstract = "In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.",

keywords = "Nanolithography, Plasma etching, Silicon nanopillars, nanolithography, silicon nanopillars, NANOWIRES, plasma etching",

author = "Basalaeva, {L. S.} and Nastaushev, {Yu V.} and Dultsev, {F. N.}",

year = "2017",

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doi = "10.1016/j.matpr.2017.09.005",

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A method for fabricating the ordered arrays of silicon nanopillars. / Basalaeva, L. S.; Nastaushev, Yu V.; Dultsev, F. N.

В: Materials Today: Proceedings, Том 4, № 11, 01.01.2017, стр. 11341-11345.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

TY - JOUR

T1 - A method for fabricating the ordered arrays of silicon nanopillars

AU - Basalaeva, L. S.

AU - Nastaushev, Yu V.

AU - Dultsev, F. N.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.

AB - In this paper, the formation of the arrays of silicon nanopillars by means of electron-beam lithography and dry etching is described. Silicon nanopillars 50 to 350 nm in diameter, 80 to 800 nm high were fabricated. Important features of the formation of these structures were described. Cones and tapered cones can be formed with the help of this method.

KW - Nanolithography

KW - Plasma etching

KW - Silicon nanopillars

KW - nanolithography

KW - silicon nanopillars

KW - NANOWIRES

KW - plasma etching

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U2 - 10.1016/j.matpr.2017.09.005

DO - 10.1016/j.matpr.2017.09.005

M3 - Article

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VL - 4

SP - 11341

EP - 11345

JO - Materials Today: Proceedings

JF - Materials Today: Proceedings

SN - 2214-7853

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ER -

A method for fabricating the ordered arrays of silicon nanopillars

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