A Broadband Near-IR Detector Based on a Large-Area InGaAs Photodiode for Time-Resolved Detection of Singlet Oxygen

V. G. Goldort; A. V. Demyanenko; A. S. Bogomolov; S. A. Kochubei; A. P. Pyryaeva; A. V. Baklanov

doi:10.1134/S0020441219010068

A Broadband Near-IR Detector Based on a Large-Area InGaAs Photodiode for Time-Resolved Detection of Singlet Oxygen

V. G. Goldort, A. V. Demyanenko, A. S. Bogomolov, S. A. Kochubei, A. P. Pyryaeva, A. V. Baklanov

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

1 Цитирования (Scopus)

Аннотация

Abstract: A broadband near-IR photodetector based on a large-area G12180-250A InGaAs photodiode (Hamamatsu) with a 5-mm-diameter photosensitive area was developed and tested. It is designed for detecting the IR luminescence of singlet oxygen. A circuit for signal amplification is assembled on the basis of broadband low-noise operational amplifiers with the subsequent filtering of a signal with an adjustable passband f varied from 15 to 600 kHz, thus allowing one to obtain a time resolution of better than 1 µs, a sensitivity level of 10 ⁷ –10 ⁹ V/W, and a noise equivalent power NEP [W/Hz ^1/2 ] ≈ 1.4 × 10 ^–14 λ ^–1 [µm] f [kHz] in a frequency band of 15–600 kHz.

Язык оригинала	английский
Страницы (с-по)	252-255
Число страниц	4
Журнал	Instruments and Experimental Techniques
Том	62
Номер выпуска	2
DOI	https://doi.org/10.1134/S0020441219010068
Состояние	Опубликовано - 1 апр 2019

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10.1134/S0020441219010068

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abstract = " Abstract: A broadband near-IR photodetector based on a large-area G12180-250A InGaAs photodiode (Hamamatsu) with a 5-mm-diameter photosensitive area was developed and tested. It is designed for detecting the IR luminescence of singlet oxygen. A circuit for signal amplification is assembled on the basis of broadband low-noise operational amplifiers with the subsequent filtering of a signal with an adjustable passband f varied from 15 to 600 kHz, thus allowing one to obtain a time resolution of better than 1 µs, a sensitivity level of 10 7 –10 9 V/W, and a noise equivalent power NEP [W/Hz 1/2 ] ≈ 1.4 × 10 –14 λ –1 [µm] f [kHz] in a frequency band of 15–600 kHz. ",

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A Broadband Near-IR Detector Based on a Large-Area InGaAs Photodiode for Time-Resolved Detection of Singlet Oxygen. / Goldort, V. G.; Demyanenko, A. V.; Bogomolov, A. S.; Kochubei, S. A.; Pyryaeva, A. P.; Baklanov, A. V.

В: Instruments and Experimental Techniques, Том 62, № 2, 01.04.2019, стр. 252-255.

Результат исследования: Научные публикации в периодических изданиях › статья › рецензирование

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AU - Goldort, V. G.

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AU - Kochubei, S. A.

AU - Pyryaeva, A. P.

AU - Baklanov, A. V.

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AB - Abstract: A broadband near-IR photodetector based on a large-area G12180-250A InGaAs photodiode (Hamamatsu) with a 5-mm-diameter photosensitive area was developed and tested. It is designed for detecting the IR luminescence of singlet oxygen. A circuit for signal amplification is assembled on the basis of broadband low-noise operational amplifiers with the subsequent filtering of a signal with an adjustable passband f varied from 15 to 600 kHz, thus allowing one to obtain a time resolution of better than 1 µs, a sensitivity level of 10 7 –10 9 V/W, and a noise equivalent power NEP [W/Hz 1/2 ] ≈ 1.4 × 10 –14 λ –1 [µm] f [kHz] in a frequency band of 15–600 kHz.

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