Abstract

Thin Bi2Se3 films were deposited on mica substrates by physical vapor deposition without the use of the carrier gas. It was found that the films with high structural quality and high conductivity are grown at a source temperature of approximately 500 °C. The resistance of 20–300 nm thick films is in the range of 102-104 Ω/sq as compared with ∼10 Ω/sq for thicker films. Bi2O2Se crystals with a similar resistivity are revealed to grow at higher temperatures (600–700 °C). It was suggested that the decrease of the thin film resistance is due to the contribution of the surface channels. Low resistivity of the Bi2Se3 films expands the scope of their possible applications as infra-red transparent electrodes.

Original languageEnglish
Article number110906
Number of pages6
JournalMaterials Research Bulletin
Volume129
DOIs
Publication statusPublished - Sep 2020

Keywords

  • Bismuth selenide
  • Electrical properties
  • Epitaxy
  • Mica
  • Microstructure
  • Physical vapor deposition
  • SB2TE3
  • RAMAN
  • BI2TE3
  • TOPOLOGICAL INSULATOR
  • QUANTUM OSCILLATIONS
  • SURFACE
  • THICKNESS

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