Valence-band offsets in strained SiGeSn/Si layers with different tin contents

A. A. Bloshkin, A. I. Yakimov, V. A. Timofeev, A. R. Tuktamyshev, A. I. Nikiforov, V. V. Murashov

Research output: Contribution to journalArticlepeer-review

Abstract

Admittance spectroscopy is used to study hole states in Si0.7–yGe0.3Sny/Si quantum wells in the tin content range y = 0.04–0.1. It is found that the hole binding energy increases with tin content. The hole size-quantization energies in structures containing a pseudomorphic Si0.7–yGe0.3Sny layer in the Si matrix are determined using the 6-band kp method. The valence-band offset at the Si0.7–yGe0.3Sny heterointerface is determined by combining the numerical calculation results and experimental data. It is found that the dependence of the experimental values of the valence-band offsets between pseudomorphic Si0.7–yGe0.3Sny layers and Si on the tin content is described by the expression ΔEV exp = (0.21 ± 0.01) + (3.35 ± 7.8 × 10–4)y eV.

Original languageEnglish
Pages (from-to)329-334
Number of pages6
JournalSemiconductors
Volume51
Issue number3
DOIs
Publication statusPublished - 1 Mar 2017

Keywords

  • ASSEMBLED QUANTUM DOTS
  • HETEROSTRUCTURES
  • PHOTOCONDUCTIVITY
  • ALLOYS
  • GROWTH
  • SN

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