Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

L. I. Fedina, A. K. Gutakovskii, Alexander V. Latyshev, Alexander L. Aseev

Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

1 Citation (Scopus)

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Physics & Astronomy