Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation

L. I. Fedina, A. K. Gutakovskii, Alexander V. Latyshev, Alexander L. Aseev

Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

1 Citation (Scopus)

Abstract

This chapter presents results illuminating one of the long-standing problems in silicon related to the prevailing formation about extended defects in (113) planes on various process exposures. Based on in situ and ex situ high-resolution electron microscopy, supported with extensive defect structure modeling and image simulations, we demonstrate that mixed aggregation of vacancies (Vs) and self-interstitials (Is) takes place in the (113) plane to form close correlated I-V pairs or V2-2I clusters and even amorphous-like phases depending on irradiation conditions. The fact that multiple defect pairs are ordered in strict sequence along nearest neighboring atomic chains in the (332) direction constituting the (113) plane predetermines the subsequent formation of a universal set of topological-bond defects, comprising low-energy (0.7-1eV/atom) fivefold and eightfold atomic rings (5-8), and, thus, the universality of the (113) plane for mixed point defect aggregation. The ordered 5-8 array where all atoms are fully coordinated provides for defect recombination, or incorporation of excessive Is, to build up the 5-6h-7-8 topological structure known as the (113) interstitial-type of defect. Such a complex mechanism of point defect aggregation in Si is caused by a low symmetry of primary point defects, and results in a decreased crystal energy for any mixed clustering of defects in the (113) plane within a temperature range of T<0.5 melting.

Original languageEnglish
Title of host publicationAdvances in Semiconductor Nanostructures
Subtitle of host publicationGrowth, Characterization, Properties and Applications
EditorsAV Latyshev, AV Dvurechenskii, AL Aseev
PublisherElsevier Science Inc.
Pages383-407
Number of pages25
ISBN (Electronic)9780128105139
ISBN (Print)9780128105122
DOIs
Publication statusPublished - 1 Jan 2017

Keywords

  • 113 defects
  • In situ HRTEM irradiation experiments
  • Self-interstitial atoms
  • Self-ordering
  • Topological-bond defects
  • Vacancies
  • INTRINSIC POINT-DEFECTS
  • MOLECULAR-DYNAMICS
  • SILICON
  • EXTENDED DEFECTS
  • TIGHT-BINDING
  • FZ-SI
  • ELECTRON-IRRADIATION
  • ION-IMPLANTATION
  • HREM IRRADIATION
  • DIFFUSION

Fingerprint

Dive into the research topics of 'Universality of the (113) Habit Plane in Si for Mixed Aggregation of Vacancies and Self-Interstitial Atoms Provided by Topological Bond Defect Formation'. Together they form a unique fingerprint.

Cite this