Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

T. V. Malin, D. S. Milakhin, I. A. Aleksandrov, V. E. Zemlyakov, V. I. Egorkin, A. A. Zaitsev, D. Yu Protasov, A. S. Kozhukhov, B. Ya Ber, D. Yu Kazantsev, V. G. Mansurov, K. S. Zhuravlev

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.

Original languageEnglish
Pages (from-to)761-764
Number of pages4
JournalTechnical Physics Letters
Issue number8
Publication statusPublished - 1 Aug 2019


  • AlGaN/GaN
  • background impurities
  • GaN
  • high-electron-mobility transistor
  • intrinsic point defects
  • NH–MBE
  • NH3-MBE
  • AlGaN

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