Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates

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Abstract

Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III-V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.

Original languageEnglish
Pages (from-to)703-710
Number of pages8
JournalSemiconductors
Volume53
Issue number5
DOIs
Publication statusPublished - 1 May 2019

Keywords

  • QUANTUM DOTS
  • DEFORMATION POTENTIALS
  • V SEMICONDUCTORS
  • SPIN DYNAMICS
  • INSB/ALAS
  • EXCITON
  • GAAS

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