Transparent silicon carbide/tunnel SiO2 passivation for c-Si solar cell front side: Enabling Jsc > 42 mA/cm2 and iVoc of 742 mV

Manuel Pomaska, Malte Köhler, Paul Procel Moya, Alexandr Zamchiy, Aryak Singh, Do Yun Kim, Olindo Isabella, Miro Zeman, Shenghao Li, Kaifu Qiu, Alexander Eberst, Vladimir Smirnov, Friedhelm Finger, Uwe Rau, Kaining Ding

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